top of page

High-Performance p-and n-MOS Transistors

 

To construct a CMOS inverter, both p-MOS and n-MOS transistors must be integrated on the same wafer. Depending on the material system, either hetero-inverters (using different materials for p- and n-type devices) or homo-inverters (using the same material) are viable approaches for realizing energy-efficient CMOS circuits. All the previously mentioned techniques—including material growth, transfer, doping, and gate stack engineering—are essential and must be seamlessly integrated to enable this technology.

校徽_標準字-6.gif

Email: pohsunho@mx.nthu.edu.tw | PI office: Delta Building T408 |  Lab: Materials Science Building R425, R514

 

​​​ National Tsing Hua University | Department of Materials Science and Engineering | 101, Section 2 Kuang Fu Road, Hsinchu, Taiwan 

 
bottom of page