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1. Kai-Chun HuangChe-Lun LeeHung-Jui LinYu-Ting ChenTsung-Hsin LiuChang-Hua LuPin-Lin WangChi-Chun ChengCheng-Chieh HsiehJessie ShiueChao-Hui YehPo-Wen ChiuChia-Chun ChenChun-Wei ChenPo-Hsun Ho*. Self-Aligned Spacer Doping in MoS2 High-κ Top-Gate Transistors. Advanced Functional Materials, 2026, e30537.                                                                                                                                                                             

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Email: pohsunho@mx.nthu.edu.tw | PI office: Delta Building T408 |  Lab: Materials Science Building R425, R514

 

​​​ National Tsing Hua University | Department of Materials Science and Engineering | 101, Section 2 Kuang Fu Road, Hsinchu, Taiwan 

 
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